Abstract
AbstractWe found that nanostructured porous silicon obtained by anodization desorbs hydrogen under electron bombardment. The kinetics of this electron‐induced effusion can be explained neither in terms of thermal processes nor by direct transference of energy from the impinging electron to the SiH bonds. We show that short lived‐large energy fluctuations (SLEFs), occurring during bimolecular recombination processes of carriers produce both, a midgap increment of the density of electronic defect states and hydrogen desorption.
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