Abstract
The influence of BCI 3, H 2 and HCI on the deposition rate of boron has been investigated in a region controlled by chemical kinetics. The separate contributions of the various gases on the deposition rate was determined by using helium as as diluent gas. From the results, the following empirical rate equation was derived: r = Ap(BCI 3) p n (H 2)− Bp(HCI), with n=0> and n=0. 5 for low and high partial pressures of BCI 3, respectively. The influence of the substrate material and gas purity on the kinetics in boron CVD was also demonstrated. It was concluded that impurities in the BCI 3 gas affected the deposition rates as well as the phase composition of the boron coatings. Moreover, it was found that the kinetics in boron CVD can be affected by the substrate material used. No single rate-determining step could be identified from the extensive general kinetics data set. Analysis of the data showed that the boron deposition may take place along the several alternative reaction paths which cannot be separated.
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