Abstract
The application of Kelvin probe force microscopy (KPFM) in ultra high vacuum (UHV) allows to determine the absolute work function of surfaces with a very high energy (<5 meV) and lateral (<20 nm) resolution. We present measurements on different UHV cleaved III–V compound semiconductors. The (110)-surface shows work function variations due to defect states at step edges. We observed band bending on the (110)-surface of GaAs from surface photovoltage measurements. Finally, we discuss the influence of the previous effects on KPFM measurement of a UHV cleaved GaP pn-homojunction. Due to the long range nature of the electrostatic forces the geometry of the tip, cantilever and sample plays an important role in KPFM.
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