Abstract
The K shell fluorescence yield ω K of Cd and Zn in Cd 1− x Zn x S semiconductors has been studied. Energy dispersive X-ray fluorescence (EDXRF) technique was used to measure K X-ray photons. Cd and Zn elements were excited by using 59.5 keV photons emitted by a 50 mCi 241Am radioactive source. The emitted characteristic K X-rays were detected by a Si (Li) detector having a resolution of 160 eV at 5.9 keV. It was found that the K shell fluorescence yield ω K changed in Cd 1− x Zn x S thin films for different compositions of x.
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