Abstract
Double-heterostructure GaAs–Alx Ga1−x As injection lasers which operate continuously at heat-sink temperatures as high as 311°K have been fabricated by liquid-phase epitaxy. Thresh-olds for square diodes as low as 100 A/cm2 and for Fabry-Perot diodes as low as 1600 A/cm2 have been obtained. Some details of preparation and properties are given.
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