Abstract
A junction field-effect transistor (20) comprises an n-type semiconductor layer (1) having a channel region, a buffer layer (3) formed on the channel region, and p+ regions (4a, 4b) formed on the buffer layer (3). The electron concentration of the buffer (3) is lower than that of the semiconductor layer (1). The electron concentration of the buffer layer (3) is preferably a tenth or less of the electron concentration of the semiconductor layer (1). With this, the threshold voltage can be easily controlled, and the channel saturated current density can be easily controlled.
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