Abstract
We have fabricated and characterized all-MoGe Josephson junctions with a very thin Al/AlO x /(Al) barrier, where the amorphous MoGe films exhibit superconducting transition temperatures up to 7 K. Due to the uniformity of the surface morphology of the MoGe films, the junctions demonstrate high uniformity of their tunneling properties. The experimental data on the temperature dependence of the subgap current agree well with theoretical calculations. The results obtained imply that Josephson tunnel junctions based on amorphous superconductors are promising candidates for use in superconducting electronics, especially in applications requiring multiple stacked junctions or the creation of a nonequilibrium quasiparticle distribution.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
