Abstract
Experimental reflection electron energy loss spectra from silicon dioxide are excited by electrons with energy ranging from $90\phantom{\rule{0.3em}{0ex}}\mathrm{eV}\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}2\phantom{\rule{0.3em}{0ex}}\mathrm{keV}$. A Monte Carlo simulation, shortly described, is utilized to calculate the same spectra. The comparison between simulated and experimental spectra shows substantial agreement, particularly at high exciting energies. Differences at low exciting energies are mainly ascribed to surface effects.
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