Abstract
In this paper, ITO porous films were prepared by the doctor-blade technique to support metal sulfide (CuS, CoS, NiS, and PbS) counter electrodes (CEs) in quantum-dot-sensitized solar cells (QDSCs). The successive ionic layer adsorption and reaction (SILAR) method was used to deposit metal sulfides on the ITO porous films. Since the ITO porous films have high mechanical properties and could offer a large surface area for the large deposition of metal sulfides, the ITO porous film-supported metal sulfide CEs exhibited much higher catalytic activity for polysulfide electrolyte than ITO glass-supported metal sulfide CEs. As a result, the photoeletrochemical performance of QDSCs was greatly improved. In addition, ITO porous film-supported CuS CEs at 12 SILAR cycles exhibited the highest catalytic activity and performance among different CEs, and ITO porous film-supported CoS CEs achieved the second highest catalytic activity and performance, still far higher than the Pt CE, while both ITO porous film-supported NiS and PbS CEs showed similar catalytic activity and performance, significantly lower than that of Pt CE. It is also suggested that many more CE materials can be easily explored and investigated by employing ITO porous films as substrates.
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