Abstract
The formation of high-resistivity layers in initially highly doped n- and p-type epitaxial GaAs by the passage of 25- to 50-MeV oxygen ions was investigated. The experimentally determined projected ranges of these ions are 14.0 and 28.8 μm, respectively. The sheet resistance of thin (0.5 μm) epitaxial surface layers exposed to such ions increases rapidly with fluence in the range 1013–1015 cm−2 but, depending on the initial doping density, may decrease again at higher doses. The remnant conductivity in the epitaxial layers after implantation is dominated by hopping processes with low activation energies (43–68 meV). Secondary-ion mass spectrometry was used to measure the depth profiles of Si ions implanted into GaAs and InP at energies of 30–70 MeV. The projected ranges are slightly larger (≤10%) than those predicted by current theory, and the activation efficiency of the implanted Si ions in both GaAs and InP is higher than for low-energy (∼100 keV) ions.
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