Abstract
Certain aspects of the physics of heteropolytypic junctions based on silicon carbide are examined. It is known that the introduction of certain impurities into the growth zone during epitaxy of silicon carbide results in the growth of films whose polytype is different from that of the initial substrate. It is also known that these impurities lead to the formation of certain deep centers in the band gap of the conductor. Analysis of published data performed in this paper shows that irradiation of SiC with various charged particles also leads to the formation of these deep centers. It is assumed that under certain experimental conditions transformation of the polytype of the already grown epitaxial SiC structure is possible under the action of irradiation and subsequent annealing.
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