Abstract
Iron-doped semi-insulating InP has been grown by chloride vapour-phase epitaxy (VPE) using nitrogen mixed with hydrogen as carrier. Reducing hydrogen partial pressure by the introduction of nitrogen greatly improves the transport of FeCl2. The influence of hydrogen partial pressure on the Fe transport, and therefore on the Fe incorporation, has been studied theoretically and experimentally. With a relatively slow growth rate, InP film with a high Fe concentration is easily obtained. Quantum-well laser diodes with semi-insulating InP(Fe) stripe-confinement have been fabricated successfully.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
