Abstract
AbstractThe CVD of iridium thin films using di‐µ‐chloro‐tetrakis(trifluorophosphine)diiridium(I) as the precursor is presented. This inorganic, volatile, and unstable precursor is supplied in‐situ into the CVD reactor by the decomposition reaction of chlorotetrakis(trifluorophosphine)iridium, a more air‐stable but more thermally sensitive compound. By using this carbon‐ and oxygen‐free precursor, condensed, conformal, and highly pure iridium metallic films are grown on SiO2/Si and Ta/TaN substrates at growth temperatures as low as 200 °C. The dependence of the deposition process, and characteristics of iridium‐deposited films such as morphology, microstructure, and chemical composition, on deposition temperature and the nature of the carrier gas (N2 or O2) are also investigated.
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