Abstract
AbstractOn the basis of the Fresnel theory special IR optical equations for the description of the transmission (T), reflection (R), and attenuated total reflection (ATR) of thin films on semiconductors are derived. It is shown that these relations (quadratic approximations of film thickness) lead to a theoretical explanation for the detection and identification of transverse and longitudinal phonon‐polaritons by means of oblique incidence of polarized light realized in different experimental modes (T, R, ATR). A comparison of calculated model spectra of SiO2 with corresponding experimental spectra shows good quantitative agreement. Furthermore, in this framework a very effective method of determination of the dielectric functions of thin films from their IR spectra is developed and applied to an Al2O3‐film on silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
