Abstract
The capacitance and voltage (C-V) characteristics of metal, oxide, and semiconductors (MOS) capacitors passivated by SrF2-B2O3-GeO2-SiO2 glasses with various water and fluoride contents were investigated. As the OH− absorption coefficient of a glass increased, adverse effects on the recovery of shifts of the hysteresisC-V curve have been observed. The water content of ions is closely related to the fluoride content in the SrF2-B2O3-GeO2-SiO2 glass. The viscous-flow transition point of glass was lowered with increasing degree of ionic character obtained from Hannay's equation.
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