Ion projection surface structuring with noble gas ions at 75 keV

Abstract

Compared to focused ion beam writing, ion projection lithography is a parallel structuring process which transfers the pattern of an open stencil mask with electrostatic demagnification optics onto the target surface. The parallel structuring process combined with the unique energy deposition characteristics (small forward scattering, small penetration depth) makes ion projection a very efficient structuring process. Using the different penetration depths of ions from a plasma source, fabrication of 3D-structures in resist, like free standing grids or T-gate structures, is possible. The ion induced intermixing of magnetic multilayers has been investigated for the creation of nano dots for data storage. The intermixing efficiency is greatly increased by using heavy ions (Ar +, Xe +). The creation of ion induced nucleation centers on p-Si allows for subsequent selective electroplating of nano structures. These nucleation centers can also start metal deposition on non-conducting surfaces (glass, polymers) by electrode less deposition in super saturated metal salt solutions. The expensive and time consuming production of open stencil masks may in future be avoided by an aperture plate with individually switchable openings. This is the aim of a European project: CHARPAN (Charged Particle Nanotech).