Abstract
Ion-beam-induced atomic mixing of Ti/Ni bilayered thin films was studied by means of transmission electron microscopy (TEM) and Auger electron spectroscopy (AES). Ion mixing was performed with 150 keV Ar ions at room temperature with doses ranging from 1 × 10 14 ions cm 2 to 1 × 10 17 ions cm 2 . At a critical dose of about 10 15 ions cm 2 , diffuse halo rings appear in the electron diffraction pattern, and increase in their intensity with Ar dose. The Auger concentration depth profiles showed that the atomic mixing actually occurred through the Ti/Ni interface and proceeded substantially during Ar bombardment. These results indicate that an amorphous phase is formed by ion mixing of the bilayers. After the highest dose of 1 × 10 17 ions cm 2 , a high density of Ar bubbles is observed near the interface boundary without formation of any dislocation structures. The observed amorphous transformation is considered to result from the cooperative process of ion-induced atomic mixing and radiation-induced lattice instability of this bilayer system.
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