Abstract
This paper discusses the use of ion implantation to develop a viable high-yielding process for fabricating super-gain transistors for integrated circuits. The authors discuss the fabrication processes utilized, the pertinent device physics, the manufacturing tradeoffs, and present the results obtained for two different ion-implanted base integrated-circuit processes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
