Abstract
The generation-limited storage time of ion-implanted GaAs p-n junction capacitors is reported. Deep n-type potential wells were formed in a lightly p-doped epitaxial layer with 150-keV Si/sup ++/ doses of 5*10/sup 13/ cm/sup -2/ and 1*10/sup 14/ cm/sup -2/. Mg/sup +/ doses of 5*10/sup 14/ cm/sup -2/ were implanted through a thin SiON cap at 40 and 60 keV to form shallow p/sup +/-regions within the n-wells. Storage times obtained from capacitance transient measurements of the p-n-p structures indicate the possibility of planar ion-implanted GaAs dynamic memory cells at room temperature.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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