Abstract
The use of MeV ion-implantation for realization of a GaAs monolithically compatible device is demonstrated. Ion implants up to 6 MeV in energy are used employing Si and S atoms. The fabricated device is an electromagnetic slow wave microstrip-like structure designed for performance into the millimeter wave regime. Phase shift θ and insertion loss L measurements are performed for frequencies 2–18 GHz at room temperature. Comparison of the experimental ion-implanted device results to epitaxial device results indicates comparable electrical performance, with no more than a 30% reduction in θ but with an improvement in loss behavior, namely a L reduction up to 40%. These θ and L differences between the ion-implanted and epitaxial devices are attributed to differences in doping profiles. Theoretical modelling of θ characteristics produces agreement with experimental data to within a few percent.
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