Ion implantation into two‐dimensional materials for electronic tailoring ‐ observing the behaviour of individual implanted atoms

Abstract

Controlled manipulation of materials on the atomic scale is a continuing challenge in physics and material science. Doping of two‐dimensional (2D) materials via low energy ion implantation could open possibilities for fabrication of nanometre‐scale patterned devices, as well as for functionalization compatible with large‐scale integrated semiconductor technology. High resolution imaging and spectroscopic analysis of these electronic dopants at the atomic scale is fundamental for understanding sites, retention, bonding and resulting effects on Fermi level shifts. This has been made achievable with the advent of aberration corrected transmission electron microscopy (TEM) and scanning TEM, as well as low‐loss electron energy loss spectroscopy (EELS). We show for the first time directly that 2Ds can be doped via ion implantation. Retention is in good agreement with predictions from calculation‐based literature values [1], as are initial results of the sites of dopants and their influence on the band structure of surrounding atoms. We present results of N‐ and B‐implantation in graphene [2,3] as well as current progress with ion‐implantation in TMDCs.