Abstract
Ion implantation doping experiments have been performetion fine-grained, polycrystalline SiC films deposited onto insulating and optically transparent sapphire substrates. The efficiency of implantation doping has been found to be critically dependent on the actual implantation and annealing sequence. Using optim and implantation and annealing sequences efficient n-type doping has been obtained after implantation of N and P impurities. Implantation of Al under the same conditions leads to p-type doping. All films exhibit UV photoconductivity. Plasma hydrogenation has been found to reduce the density of grain boundary defects in the polycrystalline SiC films.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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