Abstract
Synthetic quartz was exposed to 3 MeV N + ions at fluences ranging from 4 × 10 13 N +/cm 2 to 2 × 10 16 N +/cm 2 and was then examined by transmission electron microscopy. Electron micrographs revealed the presence of defect clusters and selected area diffraction showed a loss in crystallinity with increasing ion fluence. The extent to which these defects could be removed by annealing depended upon the ion fluence. Dauphiné twins which formed upon cooling from temperatures above the alpha-beta inversion temperature were smaller and more numerous than in the undamaged material. After annealing to 790°C and cooling, the twins which formed were larger because of removal of much of the damage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
