Abstract
Ion channeling and PAC measurements were used to show that InAs atom pairs were formed during epitaxial regrowth of In-implanted Si(As). The pairs had an electric field gradient characterized by a frequency ν q = 229 MHz and a 〈111〉 axial symmetry which implied either substitutional or tetrahedral interstitial sites of In atoms. The binding energy of the pairs was strong, as determined by measurement of their thermal equilibrium concentration. Ion channeling data showed that this binding caused an enhanced In solubility in As-doped Si, and that the In atoms in the pairs occupied substitutional lattice sites, rather than tetrahedral interstitial sites. At high As concentration, In-As 2 atom clusters were also observed, and these In atoms were also substitutional.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
