Abstract
Ion beam modification of InSe (single crystals and molecular beam epitaxy-grown thin films on Si(111) substrate) by Ar+ and O+ (3 keV beam energy) is studied by XPS. The Ar+ ion bombardment produces surface layer enrichment in metallic indium with a gradient of concentrations, i.e. the top surface layer (10–15 A) contains less metallic indium as compared to the modified layers under it. Bombardment with O+ ions produces an indium oxide layer (∽20 A thick) on top of InSe. The relevance of the observed ion beam modifications to the preparation of solid state microbattery structures is discussed. © 1997 by John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
