Abstract
Thin epitaxial TiN films have been deposited on MgO(100) substrate by ion plating technique. Both RHEED and XRD analysis indicate crystalline quality of the film. Ion channeling measurements show that the epitaxial TiN films have comparable minimum yield to that of the substrate. The damage produced in the film and the substrate lattice due to ion implantation have been investigated by the measurement of the increase in χ min in the aligned spectrum. The presence of a sharp interface in the RBS and AES spectrum confirmed the absence of any ion induced mixing. The measured minimum yield from RBS-C analysis for 500 keV and 2 MeV Si+, Kr+ and Au+ implanted epitaxial TiN films indicate that the disorder is dependent on damage efficiency which is a function of ion mass and energy.
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