Abstract
Thin films of ZnO and its ternary alloys Mg x Zn 1− x O have broad applications in transducers, resonators and filters. Similarly, transition metal- [TM-] doped ZnO is a promising candidate diluted magnetic semiconductor material for spintronic and spin-photonic applications. ZnO is a wide band gap semiconductor with direct energy band gap of 3.32 eV which can be increased upon Mg doping. Rutherford backscattering spectroscopy (RBS) with 2 MeV He ions has been used to monitor the thermal diffusion doping process of ZnO films grown on R-sapphire and silicon substrates. Concentration profiles of Mg and TM doping materials are measured as a function of processing conditions. This is a difficult case of RBS analysis as the signal of the TM dopants overlap significantly with that of Zn. Details of RBS spectra collection and analysis will be discussed. Results are compared with XPS measurements of dopant concentration and chemical state in the surface and near surface regions.
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