Abstract

The RF discharge are widely used in microtechnology to create chemically active plasma in dry etching reactors. The most important characteristics of the RF discharge to which the surface etching kinetics is extremely sensitive are the intensity and energy of ion flux from plasma to electrode. It is possible to measure the ion flux directly by mass- spectrometry. The chemical passivity of the actinometer and the prevalence of the emitting level direct electron impact excitation are the basic principles for the actinometry correctness. The theoretical analysis of ion distribution in RF discharge plasma was based on a simple momentum-transfer one-dimensional model.

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