Abstract
Initial Si wafer bow origin, and the relation between initial wafer bow and heat cycled wafer warpage were studied systematically through looking at crystal growth, from wafering process to heat cycle conditions. Initial bow and heat cycled warpages were studied from the view point of their sign and type, and their state was characterized as being of a non-elastic, elastic or plastic wafer deformation nature. Several instruments were used including a newly developed one. Initial wafer bow is seen to originate from initial slicing blade rim bending. Heat cycled warpage a fixed wafer buckling form, caused by dislocation generation and multiplication. Wafer warpage is thus seen to be affected by residual backside damage, oxygen concentration, and oxygen precipitation.
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