Abstract
This paper will demonstrate the methodology to understand the dopant fluctuation. The theoretical basis from an experimental discrete dopant profiling technique will first been introduced to analyze the RDF effect. It will be demonstrated on the advanced strain-silicon devices and advanced trigate devices. The discrete dopant distribution along the channel direction will be demonstrated. The dopant variation in a SiGe S/D strained and SiC S/D strained MOSFETs will first be demonstrated to understand the dopant fluctuation behavior. Then, experiments have been extended to the advanced bulk-trigate CMOS devices. The sidewall roughness effect in trigate has also been studied. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for the gate oxide quality monitoring of future generation trigate devices.
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