Abstract
Strain engineering of Si/Ge heterostructures with high Ge contents is allowed on the Ge-on-Si platform since a high quality Ge-on-Si has been available owing to the two-step growth method. Detailed studies on initial stages of the partial strain relaxation of strained SiGe layers on Ge-on-Si and bulk-Ge substrates clearly indicate that the strained SiGe grown on the Ge-on-Si reveals lower critical thickness than that on the Ge substrate. On the contrary, it is shown that this reduced critical thickness on the Ge-on-Si can be significantly enhanced beyond that on the Ge substrate by means of the substrate patterning. Additionally, our recent studies including strained Ge-on-Insulator fabrication and its surface passivation toward high-efficient light emitting devices are overviewed.
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