Abstract
A study of lattice-mismatched epitaxial growth and related defects and their effects on electrical characteristics of hetero-epitaxial III-Sb films grown on Si is presented in this paper. Growth of 800 nm thick GaSb on Si results in a threading dislocation density of ~6x108 cm-2; density of planar defects such as microtwins of ~2x104 cm-1 and anti-phase domain boundaries on the order of ~104 cm-1, respectively. High defect-related acceptor-type doping is also observed, the effect of which is to change polarity from n-type to p-type, whilst p-type MOS shows similar characteristics as grown on GaAs substrate. The main surface features of strained InGaSb layers grown on metamorphic AlSb or AlGaSb buffers on Si are elongated bumps due to microtwins: however, hole mobility of ~650 cm2/V-s has been obtained in a buried strained quantum well channel. In this work, we study the use of the migration enhanced epitaxy technique for the growth of AlSb seed layers on Si to improve InGaSb quality.
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