Abstract
Ultra-rapid thermal annealing in millisecond has been performed by atmospheric-pressure thermal plasma jet (TPJ) and temperature measurement based on optical interference contactless thermometry (OICT) is investigated. On the basis of optical interference in silicon wafer induced by the change in refractive index and its analysis, transient temperature variation is obtained with millisecond time resolution. Moreover, OICT imaging allow us to obtain the temperature information in planar and depth direction simultaneously.
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