(Invited) High Performance Fully Solution Processed Transistors Towards Flexible Sustainable Electronics

Abstract

High performance fully solution-processed amorphous InZnO (a-IZO) thin-film transistors (TFT) were fabricated using low temperature processes such as ultraviolet (UV) treatment, excimer laser annealing (ELA), continuous wave (CW) laser irradiation, and Ar plasma treatment. By employing a self-aligned top-gate structure, these processes can selectively functionalize the IZO semiconductor into conductive electrodes. Thus, a single IZO layer can simultaneously act as both the channel and source/drain electrode. Depending on the low temperature process employed, mobilities of up to 40 cm2 V-1 s-1 can be achieved with low turn on-voltage of -0.4 V and subthreshold swing of 0.2 V dec-1 which is comparable to TFTs fabricated by vacuum process. The low temperature approach also enabled the fabrication of fully solution processed a-IZO TFTs on flexible substrates. Comprehensive analysis of several characterization results suggests that both fluorine and oxygen vacancies play a major role in the high performance fully solution processed a-IZO TFTs.