Abstract
In this paper, we focus on resolution improvement for 1xnm half pitch. We report development of new short acid diffusion length PAG and under layer to achieve 1xnm half pitch resolution. The patterning of sub 20 nm half pitch LS was gathered from NXE: 3100 will be discussed. Patterning sub 26 nm half pitch contacts is feasible with new resist materials. The optimization of development process and application of rinse process was found to be effective to improve the RLS performance. Furthermore, we will also present the effect of underlayer materials on RLS performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
