Abstract
To enhance thin film quality by increasing the plasma density and minimizing plasma-induced damage, we introduced a new direct current (DC) biased remote plasma atomic layer deposition (RPALD) method as one of the variants of RPALD. With this new deposition method, HfO2 dielectric films were deposited and characterized to examine the effect of DC-bias on grown films. The plasma properties were investigated by using the optical emission spectroscopy (OES) and floating harmonic method. When DC biased was applied to the RF plasma, the amount of free radicals and ions were increased by the collisions between electrons and metastable atoms or molecules. The electrical properties of high-k materials, such as the effective oxide thickness (EOT) and the breakdown voltage, were improved by the DC biased RPALD when compared to those of RPALD.
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