Abstract
GaN HEMT devices with source-connected field-plates are characterized thermally to quantify their performance. A Thermoreflectance approach is used to obtain surface temperature maps of the unobstructed GaN junction areas. Different temperature behaviors on different power levels are found. In addition, a 3D thermal model is used to simulate the temperature distribution of the device. The simulation results show good correspondence with the experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
