Abstract
Previous and recent results on the electrical activation of ion implanted Al+ in 4H-SiC are analyzed. Samples with homogeneous ion implanted dopant concentrations in the decades 1018 - 1020 cm-3, implantation temperatures in the range 300 – 400 °C, post implantation annealing temperatures in the range 1500 -1950 °C, and post implantation annealing times in the range 5 min – 75.5 h are taken into account. The selected results fulfills the requirement of minimum two annealing times per annealing temperature and per ion implantation conditions. A new insight on the dynamics of the post implantation annealing in Al implanted 4H-SiC takes origin from this data analysis
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