Abstract
Al0.2Ga0.8As/In0.2Ga0.8As metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-pHEMTs) with different shifted Γ-gate structures have been comprehensively investigated in this work. The present Γ-gate MOS-pHEMTs were fabricated by using techniques of ozone water oxidation and shift exposure. Gate length (LG) reduction, surface oxide passivation, and field-plate structure are achieved at the same time by the devised Γ-gate processing. By using the same optical mask set, devices with different LG/field-plate lengths (LFP) of 1.2/0 μm, 0.8/0.4 μm, and 0.6/0.6 μm were fabricated upon the identical epitaxial layer structure. Device performances including device gain, current drive, off/on-state breakdown, high-frequency characteristics, power characteristics, and high-temperature stability up to 450 K, are investigated with respect to different LG/LFP lengths in this work.
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