Abstract
AbstractIn the present work equations have been derived for thermomagnetic and galvanomagnetic effects of multiphase systems. The equations allow us to analyse complex thermal–electrical–magnetic properties of semiconductors under variation of concentration and configuration of inclusions. The results obtained make it possible, for example, to explain discrepancies between values of phase‐transition pressure determined from thermal, electrical, volumetric and other effects. A model developed has been applied for analysis of semiconductor–metal phase transitions. The approach offered allows us also to search for ways for improvement of thermoelectric and thermomagnetic effectiveness and figure of merit of complex semiconductor systems. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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