Abstract
In this article, the requirements of voltage rise rate for punched-through (PT) structure diode avalanche shaper (DAS) triggering and the current conditions for PT and non-punchthrough (NPT) structures’ DAS triggering are given. The triggering mode of DAS is studied through experiment and simulation, and it is divided into four types: non-trigger; early trigger; half trigger; and full trigger. DAS has the fastest opening speed and the lowest residual voltage under full trigger mode; DAS is most susceptible to failure when operating in early trigger mode with the highest temperature rise. In the end, based on the current conditions proposed in this article, the criterion methods of four triggering modes are given and the differences in triggering conditions between the 4H-silicon carbide (SiC) DAS and Si DAS are compared with the help of it. The results show that 4H-SiC DAS is less likely to early trigger and has lower requirements for the rising rate of the trigger current.
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