Abstract
The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an I(on/off) ratio of 4.4 x 10(6).
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