Investigation on the super steep switching operation mechanism of Ferroelectric HfO2 and implementation of large scale logic circuit with multi Vth

Abstract

Semiconductors are crucial to the operation of many important technologies of today. However, defects can occur during the manufacture of semiconductor devices, causing issues such as the deterioration of the device in question. Dr Hyeon Jun Hwang, Center for Semiconductor Technology Convergence at Pohang University of Science and Technology, South Korea, is investigating a way to prevent these defects from occurring, thereby helping to maintain the operational performance of semiconductors. He and his team are developing a method to analyse the super-steep operation mechanisms of ferroelectric hafnia thin films. Along with changing requirements for electronic devices comes changing requirements for semiconductors, including a need for the scalability and performance of silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs to be improved, which has proved challenging. Hwang and the team have found that tunneling Field Effect Transistors (FETs) leads to encouraging characteristics. The researchers also want to uncover a means of changing the gate-coupling portion of the switching mechanism. Two different types of operational mechanisms have been suggested for FE FETs – negative capacitance and dipole switching. The team has developed a method of analysis that can even be used in real high-k materials.