Abstract
Cubic (Al)GaN/AlN multiple quantum wells were grown by plasma assisted molecular beam epitaxy with three different configurations at interfaces. We employ temperature-dependent photoluminescence to characterize interface imperfections. Our results show shallow localization states responsible to photocarrier localization at low temperatures. The potential fluctuation model estimates localization energies in the order of few meV. We investigated a single GaN/AlN, double GaN/AlN quantum wells, and a double quantum well with an additional AlGaN spacer layer as a step between the wells. The introduction of AlN and AlGaN interlayer reduces the effect of localization and indicates better interfaces for the QW structures based on cubic GaN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
