Investigation on grown-in defects in CZ-Si crystal under slow pulling rate

Abstract

The formation process of a dislocation cluster outside the oxidation-induced stacking fault (OSF) -ring region during Czochralski (CZ) silicon crystal growth was investigated using a quenching and in situ annealing technique. Dislocation clusters were determined to be interstitial type from inside–outside contrast analysis of the transmission electron microscope (TEM) image. From the quenching experiment, the clustering temperature of dislocations which were formed by supersaturated self-interstitials and/or small dislocation loops was found to be about 1000°C during growth. Furthermore, the characteristic axitial distribution of dislocation size was observed in the halted crystal. This could be explained by the change in concentration of supersaturated self-interstitials and the clustering of dislocations due to the enhancement of diffusion of point defects.