Abstract
The discovery of Weyl and Dirac fermions has greatly encouraged the study of topological aspects in condensed matter physics, especially the discovery of ferromagnetic type-II Weyl semimetals such as CeAlX (X = Si, Ge). However, the evolution process of the physical characteristics of CeAlX during the Ge/Si substitution has not been studied in detail, and the relevant researches were mostly based on their polycrystalline samples. Herein, the millimeter level single crystals of CeAl(Si1-xGex) were prepared and studied systemically. It can be concluded that the higher Ge content leads to the bigger lattice constants and electrical resistivity, but the lower magnetic transition temperature (TC) and magnetoresistance (MR). The electrical conductivity at room temperature and the MR at 2 K of CeAl(Si0.9Ge0.1) can even reach up to 6.35 and 6.55 times bigger than that of CeAl(Si0.1Ge0.9), respectively. In addition, CeAl(Si1-xGex) would change from n-type to p-type after “x” exceeds 0.5. The continuously tunable isoelectronic Ge/Si substitution makes CeAl(Si1-xGex) an excellent platform for exploring the exotic electromagnetic responses of topological materials.
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