Abstract
An Au-Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p-n junction. The results show that the Schottky diode had a higher I(sc) and harder radiation tolerance but lower V(oc) than the p-n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries.
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