Abstract
Self-organized ZnO nanopillars were grown on a-plane Al2O3 in a vertical MOCVD reactor using diethylzinc and N2O as precursors. This is the very first Thomas Swan reactor that is specially designed for the growth of ZnO and GaN. The influence of different growth parameters including growth time, VI/II-ratio, substrate temperature and reactor pressure on the shape of the nanostructures is investigated by field emission scanning electron microscopy. An explanation for the formation of nanopillars is given resulting in high substrate temperatures and low VI/II-ratios for the best results. It is shown that the density, length and diameter can be controlled choosing appropriate growth parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
