Abstract

We report on the temperature dependence of effective magnetic anisotropy in nanocrystalline Fe96Zr4 films fabricated by radio frequency sputtering. The temperature dependence of effective magnetic anisotropy presents an abnormal temperature dependence which found to increase with increasing temperature. This change was investigated using the law of approach to saturation and it was found that as the temperature increases from 20 to 280 K, the effective magnetic anisotropy coefficient increases from 1.44 × 103 J/m3 to 5.64 × 103 J/m3. This particular observation in increasing effective magnetic anisotropy with temperature was discussed by taking into account the stress-induced magnetic anisotropy contribution which becomes more dominant upon heating the film. It is shown that the magnetization reversal occurs through domain wall motion, which is influenced by the presence of inhomogeneities in the samples.

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