Abstract
In the context of titanium nitride (TiN) patterning in presence of photoresist, the formation of stains in large resist patterns during Standard Clean 1 (SC1) wet etches was investigated. These stains were found to be caused by surface modifications of the TiN layer below the photoresist, with the appearance of large bumps at its surface. XPS and ToF-SIMS characterization techniques were applied to study the TiN surface modification during the SC1 treatment. The TiN film was found to be globally etched by the SC1, with chemical modifications inside the bump area. It is hypothesized that the TiN was attacked after the penetration of wet etchants through the photoresist, but that the confined environment did not enable reaction products to be evacuated, resulting in bumps at the TiN surface.
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